Anisotropic AC conductivity of strained graphene

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Graphene's electronic properties are highly sensitive to applied strain.
• Understanding strain-induced changes is crucial for graphene-based electronic devices.
• Existing models often simplify the complex interplay of strain effects.

Purpose of the Study:

• To develop a novel Dirac Hamiltonian for calculating strained graphene properties.
• To derive generalized analytical expressions for density of states and AC conductivity.
• To explore strain-dependent phenomena like the Grüneisen parameter and shear-induced Hall effect.

Main Methods:

• Utilized a new Dirac Hamiltonian incorporating Fermi energy displacement, reciprocal lattice strain, and orbital overlap changes.
• Derived analytical expressions for density of states and AC conductivity.
• Analyzed the impact of uniform strain on graphene's electronic behavior.

Main Results:

• Developed simple analytical expressions for density of states and AC conductivity under uniform strain.
• These expressions generalize previous findings for uniaxial strain.
• Identified potential methods for measuring the Grüneisen parameter (β) and observed a shear-induced Hall effect.

Conclusions:

• The new Dirac Hamiltonian effectively captures key strain-induced electronic property changes in graphene.
• The derived analytical formulas offer a more comprehensive understanding of strained graphene.
• The study provides experimental avenues for characterizing strain effects and exploring novel phenomena.