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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

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Stacking boundaries and transport in bilayer graphene.

P San-Jose¹, R V Gorbachev, A K Geim

¹Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Cantoblanco, 28049 Madrid, Spain.

|March 11, 2014

Summary

Bilayer graphene can act as an insulator or metal due to stacking domain boundaries, not electron interactions. These boundaries, or solitons, explain the observed insulating behavior and can be reversibly switched.

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Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Pristine bilayer graphene exhibits a transport gap, suggesting an insulating state attributed to electron correlations.
However, similar samples display metallic properties, creating a dichotomy in observed behavior.
Existing explanations focus on many-body electron interactions.

Purpose of the Study:

To propose an alternative explanation for the insulating behavior in bilayer graphene.
To investigate the role of stacking domain boundaries in electronic properties.
To demonstrate the reversible switching between metallic and insulating states.

Main Methods:

Numerical analysis to model scattering from stacking domain boundaries.
Experimental investigation of suspended bilayer graphene samples.
Application of thermal cycling and high current annealing to induce state switching.

Main Results:

Scattering from boundaries between AB and BA stacking domains explains the features of the inferred many-body insulating state.
Reversible switching between metallic and insulating regimes was observed.
The observed phenomena are attributed to stacking domain boundaries, not electron interactions.

Conclusions:

Stacking domain boundaries ('solitons') provide a compelling explanation for the insulating behavior in bilayer graphene.
The reversible switching demonstrates the dynamic nature of these boundaries and their impact on electronic properties.
This finding challenges previous interpretations based solely on electron-electron interactions.