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Thermally stable and high ON/OFF ratio non-volatile memory devices based on poly(triphenylamine) with pendent PCBM
Chih-Jung Chen1, Jia-Hao Wu, Guey-Sheng Liou
1Functional Polymeric Materials Laboratory, Institute of Polymer Science and Engineering, National Taiwan University, 1 Roosevelt Road, 4th Sec., Taipei 10617, Taiwan. gsliou@ntu.edu.tw.
Abstract:
High ON/OFF ratio electrically bistable non-volatile WORM memory devices were prepared based on poly(triphenylamine) with different amounts of pendent PCBM. With the introduction of 10 wt% PCBM into P-TPA via covalent bonding, a memory device with low switching-ON voltage (0.9 V) and high ON/OFF ratio (10(9)) could be obtained. The device performance remained satisfactory under the heating condition up to 100 °C which is beneficial to maintain device stability for computer application when other components produce heat.
