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Updated: May 2, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Jialin Zhang1, Zhunzhun Wang2, Tianchao Niu3
11] Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore [2].
Understanding graphene growth at the atomic level is key for high-quality material. This study reveals carbon clusters are C2H5, aiding graphene nucleation and island formation during chemical vapor deposition (CVD).
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