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Proximity effect in graphene-topological-insulator heterostructures
Junhua Zhang1, C Triola1, E Rossi1
1Department of Physics, College of William and Mary, Williamsburg, Virginia 23187, USA.
Physical Review Letters
|March 25, 2014
Summary
We developed a model for graphene on topological insulators. The proximity of the topological insulator (TI) enhances spin-orbit coupling in graphene, tunable by twist angle.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Chemistry
Background:
- Graphene exhibits unique electronic properties.
- Topological insulators (TIs) possess a unique band structure with spin-momentum locking.
- Heterostructures of 2D materials with TIs are promising for novel electronic phenomena.
Purpose of the Study:
- To model the low-energy electronic structure of graphene/TI heterostructures.
- To investigate the impact of stacking order (commensurate vs. incommensurate) on electronic properties.
- To understand how TI proximity affects graphene's spin-orbit coupling.
Main Methods:
- Formulation of a continuum model.
- Analysis of electronic band structure.
- Theoretical investigation of spin-orbit coupling effects.
Main Results:
- The proximity of a strong three-dimensional topological insulator (TI) induces significant spin-orbit coupling in graphene.
- This induced spin-orbit coupling is tunable.
- Incommensurate stacking, due to twist angle or lattice mismatch, offers a mechanism for tuning.
Conclusions:
- Graphene/TI heterostructures offer a platform for tunable spintronic applications.
- The twist angle is a key parameter to control spin-orbit coupling in these systems.
- This work provides a theoretical framework for designing novel electronic devices based on TI/graphene interfaces.
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