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Moiré interferometry with high alignment resolution in proximity lithographic process.

Shaolin Zhou, Song Hu, Yongqi Fu

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    |March 26, 2014
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    Moiré interferometry precisely measures wafer-mask alignment in lithography. This study demonstrates nanometer-level detection of lateral offset and reduction of tilt and twist angles using diffraction gratings.

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    Area of Science:

    • Optics and Metrology
    • Nanotechnology
    • Lithography

    Background:

    • Moiré interferometry is a crucial precise metrology technique.
    • Diffraction gratings are commonly used in moiré-based interferometry schemes.
    • Precise alignment is critical in proximity lithography systems.

    Purpose of the Study:

    • To present moiré interferometry schemes for proximity lithography applications.
    • To explore (m,-m) and (m,0) moiré interferometry for lateral offset, tilt, and in-plane twist angle adjustments.
    • To experimentally validate the effectiveness of these schemes.

    Main Methods:

    • Utilizing diffraction gratings with close periods to create composite gratings.
    • Developing and applying (m,-m) and (m,0) moiré interferometry schemes.
    • Conducting experimental validation in a proximity lithographic system.

    Main Results:

    • Demonstrated nanometer-level resolution for detecting unaligned lateral offset.
    • Achieved manual reduction of tilt angles to the order of 10⁻³ rad.
    • Achieved manual reduction of in-plane twist angles to the order of 10⁻⁴ rad.

    Conclusions:

    • Moiré interferometry schemes are effective for precise metrology in proximity lithography.
    • The presented methods enable accurate measurement and adjustment of critical alignment parameters.
    • This technique significantly enhances wafer-mask alignment accuracy.