Related Experiment Video
Updated: May 1, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
High responsivity, low dark current, heterogeneously integrated thin film Si photodetectors on rigid and flexible
Abstract:
We report thin film single crystal silicon photodetectors (PDs), composed of 13- 25 μm thick silicon, heterogeneously bonded to transparent Pyrex® and flexible Kapton® substrates. The measured responsivity and dark current density of the PDs on pyrex is 0.19 A/W - 0.34 A/W (λ = 470 nm - 600 nm) and 0.63 nA/cm(2), respectively, at ~0V bias. The measured responsivity and dark current density of the flexible PDs is 0.16 A/W - 0.26 A/W (λ = 470 nm - 600 nm) and 0.42 nA/cm(2), respectively, at a ~0V bias. The resulting responsivity-to-dark current density ratios for the reported rigid and flexible PDs are 0.3-0.54 cm(2)/nW and 0.38-0.62 cm(2)/nW, respectively. These are the highest reported responsivity-to-dark current density ratios for heterogeneously bonded thin film single crystal Si PDs, to the best of our knowledge. These PDs are customized for applications in biomedical imaging and integrated biochemical sensing.
More Related Videos
08:18Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
Published on: October 3, 2015
10:45Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025