4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width

Area of Science:

• Photonics and Semiconductor Lasers
• Integrated Optics
• Materials Science

Background:

• Silicon photonics offers a promising platform for integrated optical circuits due to its mature fabrication processes.
• Developing compact, tunable, and room-temperature lasers on silicon remains a significant challenge for integrated photonic applications.

Purpose of the Study:

• To realize a four-wavelength silicon hybrid laser array operating at room temperature.
• To demonstrate evanescent coupling of InGaAsP multi-quantum wells to silicon waveguides for laser emission.
• To investigate the performance characteristics of the hybrid laser array.

Main Methods:

• Fabrication of a silicon hybrid laser array using selective-area metal bonding technology.
• Integration of InGaAsP multi-quantum wells with silicon waveguides of varying widths patterned with distributed feedback gratings.
• Utilizing standard photolithography and holographic lithography for silicon waveguide fabrication (CMOS compatible).

Main Results:

• Successfully realized a four-wavelength silicon hybrid laser array operating at room temperature.
• Lasers exhibit emission peaks between 1539.9 and 1546.1 nm with a wavelength spacing of approximately 2.0 nm.
• Individual lasers show a typical threshold current of 50 mA and a side-mode suppression ratio of 20 dB.

Conclusions:

• The developed silicon hybrid laser array represents a significant advancement in on-chip laser technology.
• The use of CMOS-compatible fabrication techniques paves the way for scalable integration of tunable lasers.
• This technology holds potential for various applications in optical communications and sensing.