Photoluminescence in Ga/Bi co-doped silica glass

Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active center (BAC) was identified as the analogue of Al-connected BAC. Visible and infrared photoluminescence (PL) were investigated in a wide temperature range of 1.46 - 300 K. Based on the results of the continuous wave (CW) and time resolved (TR) spectroscopy we identify the centers emitting in the spectral region of 480 - 820 nm as Bi(+) ions. The near infrared (NIR) PL around 1100 nm consists of two bands. While the first one can be ascribed to the transition in Bi(+) ion, the second band is presumably associated to defects. We put in evidence the energy transfer (ET) between Bi(+) ions and the second NIR emitting center via quadrupole-quadrupole and dipole-quadrupole mechanisms of interactions. Finally, we propose the energy level diagram of Bi(+) ion interacting with this defect.