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Updated: May 1, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Quantum dot cascade laser
Ning Zhuo, Feng Qi Liu1, Jin Chuan Zhang
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P, O, Box 912, Beijing 100083, China. fqliu@red.semi.ac.cn.
Abstract:
We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm-1. These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation.
Pacs:
42.55.Px; 78.55.Cr; 78.67.Hc.
