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Updated: May 1, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Ning Zhuo, Feng Qi Liu1, Jin Chuan Zhang
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P, O, Box 912, Beijing 100083, China. fqliu@red.semi.ac.cn.
Researchers developed a quantum dot cascade laser using InGaAs/GaAs/InAs/InAlAs heterostructures. This novel laser operates at 6.15 μm and shows potential for room-temperature terahertz applications.
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