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Growth and etch rate study of low temperature anodic silicon dioxide thin films
1MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Medak, Andhra Pradesh 502205, India.
Thescientificworldjournal
|March 28, 2014
Summary
Anodic oxidation enables room temperature silicon dioxide (SiO2) thin film deposition for microelectronics. This study optimizes growth parameters, achieving uniform, less porous SiO2 films ideal for integrated circuits and MEMS applications.
Area of Science:
- Materials Science
- Nanotechnology
- Electrochemistry
Background:
- Silicon dioxide (SiO2) thin films are critical insulators in silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS).
- Low-temperature deposition methods are essential for fabricating these devices, with anodic oxidation offering a viable room-temperature process.
Purpose of the Study:
- To deposit uniform silicon dioxide thin films at room temperature using anodic oxidation.
- To investigate the influence of voltage, electrolyte stirring, current density, and water content on film properties and growth rate.
Main Methods:
- Anodic oxidation of silicon in potentiostatic and potentiodynamic regimes.
- Characterization using ellipsometry, Fourier-transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM).
Main Results:
- Achieved a growth rate of 5.25 Å/V in potentiostatic mode.
- Attained a film thickness of 160 nm at 300 V in potentiodynamic mode.
- The resulting silicon dioxide films were uniform, slightly silicon-rich, and less porous.
Conclusions:
- Anodic oxidation is an effective room-temperature technique for producing high-quality silicon dioxide films.
- Optimized growth conditions yield films suitable for microelectronic and MEMS applications.
