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Updated: May 1, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Semiconductor alloy nanoribbon lateral heterostructures for high-performance photodetectors
Pengfei Guo1, Wei Hu, Qinglin Zhang
1Key Laboratory for Micro-Nano Physics and Technology of Hunan Province and State Key Laboratory of Chemo/biosensing and Chemometrics (CBSC), Hunan University, Changsha, 410082, P.R. China.
Abstract:
High-performance visible-light photodetectors are achieved based on single nanoribbon lateral heterostructures composed of two different semiconductor alloys epitaxially grown in the lateral direction. They reveal superior spectral response range, responsivity, Ion/Ioff ratio, and external quantum efficiency, relative to devices based on single composition structures.
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