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Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired
Galo A Torres Sevilla1, Jhonathan P Rojas, Hossain M Fahad
1Integrated Nanotechnology Lab, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
Advanced Materials (Deerfield Beach, Fla.)
|March 29, 2014
Abstract:
An industry standard 8'' silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.
