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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Resistive switching behavior in gelatin thin films for nonvolatile memory application.

Yu-Chi Chang¹, Yeong-Her Wang

¹Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng-Kung University , Tainan 701, Taiwan.

ACS Applied Materials & Interfaces

|April 1, 2014

Summary

This study shows gelatin-based memory devices exhibit reliable resistive switching with high ON/OFF ratios and long retention. The mechanism involves carbon-rich filaments, not metal filaments, for improved conductivity.

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Area of Science:

Materials Science
Electronics
Nanotechnology

Background:

Resistive switching memory devices are crucial for next-generation electronics.
Understanding the switching mechanism in organic-based materials is key to developing novel memory technologies.
Aluminum (Al)/gelatin/indium tin oxide (ITO) devices offer a potential pathway for low-cost, flexible memory applications.

Purpose of the Study:

To investigate the resistive switching characteristics of Al/gelatin/ITO devices.
To elucidate the underlying mechanism responsible for the observed bipolar resistive switching.
To analyze the role of elemental composition and structural changes in device performance.

Main Methods:

Fabrication and electrical characterization of Al/gelatin/ITO memory devices.
High-angle dark field transmission electron microscopy (HAADF-TEM) for structural analysis.
Energy-dispersive X-ray spectroscopy (EDS) to determine elemental composition.
Current-sensing atomic force microscopy (CS-AFM) to map conduction pathways.

Main Results:

Devices demonstrated reproducible bipolar resistive switching with a high ON/OFF ratio (>10^6) and long retention time (>10^5 s).
HAADF-TEM and EDS analyses revealed the rupture of filament paths containing aggregated N and Al elements, along with C and O.
CS-AFM indicated that ON-state conduction paths are highly localized, consistent with a carbon-rich filamentary switching mechanism.

Conclusions:

The resistive switching in Al/gelatin/ITO devices is attributed to a carbon-rich filamentary mechanism.
Chelation of nitrogen binding with aluminum ions enhances low-resistance state conductivity but does not involve metal filament formation.
Gelatin serves as a viable material for reproducible resistive switching memory applications.