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High RF carrier frequency modulation in silicon resonators by coupling adjacent free-spectral-range modes
Optics Letters
|April 2, 2014
Summary
This study demonstrates modulating silicon ring resonators above their resonance linewidth using adjacent free-spectral-range (FSR) modes. This novel approach enables high-frequency modulation with potentially lower power consumption for silicon photonics.
Area of Science:
- Photonics
- Electrical Engineering
- Materials Science
Background:
- Silicon ring resonators are key components in silicon photonics.
- Modulating these resonators at high radio frequencies (RF) is challenging due to resonance linewidth limitations.
- Existing modulation schemes face limitations at higher carrier frequencies.
Purpose of the Study:
- To demonstrate a new modulation scheme for silicon ring resonators.
- To achieve modulation at RF carrier frequencies exceeding the resonance linewidth.
- To theoretically assess the power consumption of this novel modulator.
Main Methods:
- Utilizing the coupling of adjacent free-spectral-range (FSR) resonance modes.
- Matching the modulation frequency to the FSR frequency.
- Theoretically analyzing power consumption compared to standard modulators.
Main Results:
- Successfully demonstrated 20 GHz modulation in a silicon ring resonator with an 11.7 GHz linewidth.
- The proposed scheme allows modulation at frequencies higher than the resonance linewidth.
- Theoretical analysis indicates lower power consumption at high carrier frequencies.
Conclusions:
- The demonstrated FSR-coupled resonance mode scheme is effective for high-frequency modulation of silicon ring resonators.
- This technique offers a promising solution for overcoming linewidth limitations in silicon photonics.
- The results pave the way for advanced on-chip high-frequency analog communication and signal processing.
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