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Related Experiment Video

Updated: May 1, 2026

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Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide

Yuqing Jiao, Josselin Pello, Alonso Millan Mejia

    Optics Letters
    |April 3, 2014
    PubMed
    Summary

    This study introduces a new electron-beam resist mixture using ZEP520A and C60 fullerene. This enhanced resist improves thermal stability and reduces propagation loss in photonic devices.

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    Area of Science:

    • Materials Science
    • Nanotechnology
    • Photonics Engineering

    Background:

    • Electron-beam lithography is crucial for fabricating nanoscale devices.
    • Standard resists like ZEP520A have limitations in thermal resistance and pattern definition.
    • Improving resist properties is key to advancing photonic integrated circuits.

    Purpose of the Study:

    • To develop a novel electron-beam resist by mixing ZEP520A with C60 fullerene.
    • To evaluate the impact of C60 fullerene on the resist's material properties and performance.
    • To demonstrate the fabrication of advanced photonic devices using the new resist.

    Main Methods:

    • Preparation of a mixed resist comprising ZEP520A positive resist and C60 fullerene.
    • Electron beam exposure and material characterization of the mixed resist.
    • Fabrication of photonic devices including multimode interference couplers, microring resonators, distributed Bragg reflectors, and InP membrane waveguides.

    Main Results:

    • The mixed resist exhibits significantly altered material properties under electron beam exposure.
    • Improved thermal resistance was observed in fabricated multimode interference couplers and microring resonator coupling regions.
    • Enhanced pattern definition accuracy was achieved for distributed Bragg reflector structures.
    • Fabrication of straight InP membrane waveguides resulted in a reduced propagation loss from 6.6 to 3.3 dB/cm.

    Conclusions:

    • The C60 fullerene addition effectively enhances the performance of ZEP520A electron-beam resist.
    • The developed mixed resist is suitable for fabricating high-performance photonic devices.
    • This advancement offers a promising route for improved nanofabrication in photonics.