Related Experiment Video
Updated: May 1, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
A high resolution ionoluminescence study of defect creation and interaction
V Veligura1, G Hlawacek, R van Gastel
1Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.
Abstract:
Helium ion microscopy has been used to investigate the ionoluminescence of NaCl. A 35 keV, sub-nanometer He(+) ion beam was used to generate ionoluminescence. The interaction of ionizing radiation with alkali halides leads to the formation of various crystal defects, in particular so-called color-centers. Their subsequent recombination with charge carriers leads to the emission of visible light. Broad peaks at 2.46 eV and 3.05 eV were measured. We have also investigated the dynamics of defect creation as a function of the beam scanning parameters (current and pixel spacing). The resolution and detection capabilities of ionoluminescence in helium ion microscopy are sensitive to both sample properties and scanning parameters.
More Related Videos
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Photoluminescence: Applications
Imperfections in Crystal Structure: Point, Line and Plane Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects

