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Updated: May 1, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
A high resolution ionoluminescence study of defect creation and interaction
V Veligura1, G Hlawacek, R van Gastel
1Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.
Helium ion microscopy reveals ionoluminescence in NaCl, linked to crystal defects and light emission. Defect creation dynamics depend on beam scanning parameters, impacting imaging resolution and detection.
Area of Science:
- Materials Science
- Solid-State Physics
- Optical Spectroscopy
Background:
- Alkali halides like NaCl are susceptible to defect formation under ionizing radiation.
- Defect recombination in these materials can result in visible light emission (color-centers).
- Helium ion microscopy offers high-resolution imaging and analysis capabilities.
Purpose of the Study:
- To investigate the ionoluminescence properties of sodium chloride (NaCl) using helium ion microscopy.
- To characterize the emitted light spectra and identify defect-related emission peaks.
- To explore the influence of beam scanning parameters on defect creation dynamics.
Main Methods:
- Utilized a 35 keV, sub-nanometer He(+) ion beam for excitation.
- Employed helium ion microscopy to generate and detect ionoluminescence.
- Analyzed spectral data to identify emission peaks and their energies.
- Varied beam current and pixel spacing to study defect dynamics.
Main Results:
- Observed broad ionoluminescence peaks in NaCl at 2.46 eV and 3.05 eV.
- Demonstrated that ionoluminescence is associated with the formation and recombination of crystal defects (color-centers).
- Found that defect creation is dependent on helium ion beam scanning parameters.
Conclusions:
- Helium ion microscopy is effective for studying ionoluminescence and defect formation in NaCl.
- The resolution and detection of ionoluminescence are influenced by both sample characteristics and microscopy settings.
- Understanding these parameters is crucial for optimizing defect analysis and imaging.
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