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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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Role of Ga vacancy on a multilayer GaTe phototransistor

Zhenxing Wang1, Kai Xu, Yuanchang Li

  • 1National Center for Nanoscience and Technology , Beijing 100190, People's Republic of China.

ACS Nano
|April 5, 2014
PubMed

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