Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

1.4K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.4K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K
MOS Capacitor01:25

MOS Capacitor

1.8K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

1.2K
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
1.2K
MOSFET01:16

MOSFET

1.8K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.8K
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

1.4K
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Combination of Deferoxamine and Deferiprone demonstrates superior efficiency compared to monotherapies in management of cardiac iron overload: Evidence from meta-analysis.

European journal of pharmacology·2026
Same author

Multiproxy Geochemical Reconstruction of Paleoenvironment and Its Control on Fine-Grained Sedimentation in the Da'anzhai Member of the Jurassic System, Sichuan Basin.

ACS omega·2026
Same author

Multi-dipole weighted method for accurate light extraction simulation of micro-LEDs.

Optics express·2026
Same author

Sterol Endoperoxides and Their Antileishmanial Effects: Influence on Viability, Oxygen Metabolism and Sterol Synthesis.

Molecules (Basel, Switzerland)·2026
Same author

Targeting mitochondrial bioenergetics: the "Achilles' heel" of Leishmania.

Parasites & vectors·2026
Same author

Wafer-Scale Heterogeneous Integration of High-Resolution Micro-LED Displays with Carbon Nanotube Thin-Film Transistors.

ACS nano·2026

Related Experiment Video

Updated: May 1, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K

Low-frequency noise in bilayer MoS(2) transistor.

Xuejun Xie1, Deblina Sarkar, Wei Liu

  • 1Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106, United States .

ACS Nano
|April 9, 2014
PubMed
Summary

Low-frequency noise in nanoscale electronics, particularly two-dimensional (2D) materials like molybdenum disulfide (MoS2) transistors, is reduced by understanding trap dynamics. Annealing weakens van der Waals bonds, decreasing trap density and improving device performance.

More Related Videos

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

11.3K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

18.0K

Related Experiment Videos

Last Updated: May 1, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

11.3K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

18.0K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Low-frequency noise significantly degrades nanoscale electronic device performance.
  • Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDs), are highly susceptible to surface contaminants affecting their electronic properties.

Purpose of the Study:

  • Investigate the origin of low-frequency noise peaks in transistors based on molybdenum disulfide (MoS2), a representative TMD material.
  • Develop a physical model to explain the observed noise characteristics in 2D material-based transistors.

Main Methods:

  • Performed low-frequency noise measurements on bilayer MoS2 channel transistors.
  • Developed a trap decay-time based model, extending the carrier number fluctuation model.
  • Analyzed the influence of van der Waals bonding on trap dynamics in 2D materials.

Main Results:

  • Observed a distinct noise peak in the gate-voltage dependence of MoS2 transistors, similar to graphene.
  • The noise peak is attributed to trap decay times governed by van der Waals bonds between the 2D material and its environment.
  • The developed model explains various noise dependencies on gate voltage and atomic layer count across different 2D materials.

Conclusions:

  • The weak van der Waals bonding between surface traps and 2D materials is key to understanding noise behavior.
  • An annealing process effectively reduces trap density by weakening these bonds.
  • This approach significantly mitigates low-frequency noise in 2D material-based electronic devices.