Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

1.5K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.5K
Standing Waves in a Cavity01:28

Standing Waves in a Cavity

1.7K
A household microwave and lasers are examples of standing electromagnetic waves in a cavity. When two conducting metal plates are placed parallel at the nodal planes, it creates a cavity where standing waves are formed. The cavity between the two planes is analogous to a stretched string held at the points x = 0 and x = L. Here, the distance 'L' between the two planes must be an integer multiple of half of the wavelength. The wavelengths that satisfy this condition are given by:
1.7K
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

1.4K
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

All-optical spiking laser neuron integrated in generic InP photonic circuit technology.

Optics express·2025
Same author

Widely tunable multimode-interference based coupled cavity laser with integrated interferometer.

Optics express·2018
Same author

Stability of a monolithic integrated filtered-feedback laser.

Optics express·2012
Same author

Characterization of a photonic strain sensor in silicon-on-insulator technology.

Optics letters·2012
Same author

Creation and annihilation of phase singularities near a sub-wavelength slit.

Optics express·2009
Same author

Connection between phase singularities and the radiation pattern of a slit in a metal plate.

Physical review letters·2004
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: May 1, 2026

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
07:39

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

Published on: July 21, 2018

6.5K

Rate-equation model for multi-mode semiconductor lasers with spatial hole burning.

Daan Lenstra, Mirvais Yousefi

    Optics Express
    |April 11, 2014
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces rate equations to model multi-mode semiconductor laser dynamics, including spatial hole burning and mode interactions. The model explains asymmetric gain suppression, known as the Bogatov effect, in semiconductor lasers.

    More Related Videos

    Characterization of Anisotropic Leaky Mode Modulators for Holovideo
    09:36

    Characterization of Anisotropic Leaky Mode Modulators for Holovideo

    Published on: March 19, 2016

    7.6K
    The Generation of Higher-order Laguerre-Gauss Optical Beams for High-precision Interferometry
    12:14

    The Generation of Higher-order Laguerre-Gauss Optical Beams for High-precision Interferometry

    Published on: August 12, 2013

    22.7K

    Related Experiment Videos

    Last Updated: May 1, 2026

    Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
    07:39

    Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

    Published on: July 21, 2018

    6.5K
    Characterization of Anisotropic Leaky Mode Modulators for Holovideo
    09:36

    Characterization of Anisotropic Leaky Mode Modulators for Holovideo

    Published on: March 19, 2016

    7.6K
    The Generation of Higher-order Laguerre-Gauss Optical Beams for High-precision Interferometry
    12:14

    The Generation of Higher-order Laguerre-Gauss Optical Beams for High-precision Interferometry

    Published on: August 12, 2013

    22.7K

    Area of Science:

    • Optics and Photonics
    • Semiconductor Physics
    • Laser Dynamics

    Background:

    • Semiconductor lasers exhibit complex multi-mode dynamics.
    • Spatial hole burning significantly influences laser behavior.
    • Understanding mode interactions is crucial for laser design.

    Purpose of the Study:

    • To develop a deterministic model for multi-mode semiconductor laser dynamics.
    • To incorporate spatial hole burning and carrier-induced mode interactions.
    • To derive and illustrate the Bogatov effect.

    Main Methods:

    • Formulation of rate equations for modal amplitudes and carrier-inversion moments.
    • Inclusion of high-frequency carrier modulations.
    • Numerical and analytical analysis of two- and three-mode lasers.

    Main Results:

    • A comprehensive model for deterministic multi-mode semiconductor laser dynamics.
    • Derivation of the Bogatov effect (asymmetric gain suppression).
    • Demonstration of the model's utility for analyzing mode interactions.

    Conclusions:

    • The presented rate equations accurately describe multi-mode semiconductor laser behavior.
    • The model provides insights into spatial hole burning and mode coupling mechanisms.
    • The Bogatov effect is effectively explained by this theoretical framework.