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Updated: Aug 13, 2026

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
Published on: July 26, 2016
Anisotropic growth of the thiophene-based layer on Si(111)-B
A Rochefort1, Y Makoudi, A Maillard
1Polytechnique Montréal, Engineering Physics Department and Regroupement québécois sur les matériaux de pointe (RQMP), Montréal, Canada. alain.rochefort@polymtl.ca.
Abstract:
The formation of large assemblies on the Si(111)-B surface is discussed with the help of STM simulations and DFT calculations. Although highly regular assemblies of DTB10B along the Si row direction are observed, the existence of two herringbone isomers introduces a lower periodicity within the 2D molecular network. The formation of herringbone units is explained by weak intermolecular interactions while the 1D assembling depends mainly on the interactions of the C10 side chains with the Si(111)-B surface.
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