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Structural dynamics of GaN microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray

V Kachkanov1, B Leung2, J Song2

  • 1Diamond Light Source Ltd, Diamond House, Chilton, Didcot, Oxfordshire, OX11 0DE, UK.

Scientific Reports
|April 12, 2014
PubMed
Summary

The Evolutionary Selection Selective Area Growth (ES-SAG) method enables high-quality semiconductor growth. Specific growth tunnel dimensions, like 2.6 μm and 4.5 μm, are crucial for this substrate-insensitive process.

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Area of Science:

  • Materials Science
  • Crystallography
  • Semiconductor Physics

Background:

  • Achieving high-quality, single crystalline semiconductor material independent of the substrate is key for cost-effective optoelectronic device enhancement.
  • The novel Evolutionary Selection Selective Area Growth (ES-SAG) process offers a potential solution for substrate-insensitive growth.

Purpose of the Study:

  • To investigate the structural properties of Gallium Nitride (GaN) microcrystals grown using the ES-SAG method.
  • To understand the influence of growth structure dimensions on the ES-SAG mechanism and the resulting GaN microcrystal properties.

Main Methods:

  • Utilized X-ray microdiffraction for high-resolution structural analysis in both direct and reciprocal spaces.
  • Examined GaN microcrystals grown within different dimensions of growth constrictions (tunnels).

Main Results:

  • Identified that specific growth tunnel widths (2.6 μm and 4.5 μm) favor the evolutionary selection mechanism in ES-SAG.
  • Observed that wider growth tunnels (8.6 μm) do not support this mechanism as effectively.
  • Found that GaN microcrystal ensembles exhibit a slight tensile strain, regardless of the growth tunnel dimensions.

Conclusions:

  • The geometric proportions of growth constrictions critically influence the effectiveness of the ES-SAG process.
  • ES-SAG shows promise for producing high-quality GaN microcrystals with controlled structural properties.
  • The inherent tensile strain in GaN microcrystals warrants further investigation for device applications.