X-ray Diffraction of Biological Samples
X-ray Crystallography
Determination of Crystal Structures
Crystal Growth: Principles of Crystallization
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Updated: May 1, 2026

Microfluidic Chips for In Situ Crystal X-ray Diffraction and In Situ Dynamic Light Scattering for Serial Crystallography
Published on: April 24, 2018
V Kachkanov1, B Leung2, J Song2
1Diamond Light Source Ltd, Diamond House, Chilton, Didcot, Oxfordshire, OX11 0DE, UK.
The Evolutionary Selection Selective Area Growth (ES-SAG) method enables high-quality semiconductor growth. Specific growth tunnel dimensions, like 2.6 μm and 4.5 μm, are crucial for this substrate-insensitive process.
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