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Updated: May 1, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Electronic properties of isosymmetric phase boundaries in highly strained Ca-Doped BiFeO₃
Jan Seidel1, Morgan Trassin, Yi Zhang
1School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA; Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA.
No abstract available in PubMed .
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