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Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate
Bhim Chamlagain1, Qing Li, Nirmal Jeevi Ghimire
1Department of Physics and Astronomy, Wayne State University , Detroit, Michigan 48201, United States.
ACS Nano
|April 16, 2014
Summary
Molybdenum diselenide (MoSe2) transistors fabricated on flexible parylene-C substrates exhibit significantly higher electron mobility than those on SiO2. This MoSe2 device performance is attributed to reduced polar optical phonon scattering from the parylene-C surface.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Molybdenum diselenide (MoSe2) is a promising 2D material for next-generation electronics.
- Substrate choice critically impacts the electrical performance of 2D material-based field-effect transistors (FETs).
- Understanding substrate effects is crucial for optimizing MoSe2 device fabrication and performance.
Purpose of the Study:
- To characterize MoSe2 crystals using scanning tunneling microscopy.
- To fabricate and electrically characterize MoSe2 FETs on SiO2 and parylene-C substrates.
- To investigate the influence of substrate material on MoSe2 device mobility and transport properties.
Main Methods:
- Low-temperature scanning tunneling microscopy (STM) for crystal characterization.
- Fabrication of MoSe2 field-effect transistors (FETs) on SiO2 and parylene-C.
- Electrical characterization including variable-temperature transport measurements.
- Atomic force microscopy (AFM) for substrate surface analysis.
Main Results:
- MoSe2 FETs on parylene-C demonstrated significantly higher room-temperature mobility (100-160 cm²/Vs) compared to SiO2 (≈50 cm²/Vs).
- Mobility was largely thickness-independent for multilayer MoSe2 on both substrates.
- Variable-temperature measurements revealed a metal-insulator transition and mobility enhancement up to ≈500 cm²/Vs at low temperatures.
- Substrate-dependent mobility was attributed to surface polar optical phonon scattering from SiO2, not surface roughness.
Conclusions:
- Flexible parylene-C substrates enable high-performance MoSe2 transistors with mobility approaching bulk values.
- Surface polar optical phonon scattering from SiO2 is a primary limitation for MoSe2 mobility.
- MoSe2 FETs on parylene-C offer a promising platform for flexible electronics with enhanced carrier transport.
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