A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications

Area of Science:

• Materials Science
• Electrical Engineering
• Computer Engineering

Background:

• Resistive Random Access Memory (RRAM) is crucial for high-density memory applications.
• Cross-talk interference and sneak currents in RRAM crossbar arrays limit integration density.
• Effective methods are needed to suppress sneak currents for scalable RRAM.

Purpose of the Study:

• To propose a novel selector design using anti-parallel diodes for bipolar RRAM crossbar arrays.
• To demonstrate the suppression of sneak currents in high-density RRAM arrays.
• To evaluate the potential of this design for realizing over 1 Mb RRAM integration.

Main Methods:

• Integration of two anti-parallel connected diodes with a bipolar RRAM cell.
• Utilizing the anti-parallel diodes as a selector mechanism.
• Employing a 1/2V read voltage scheme for estimation and analysis.

Main Results:

• Effective suppression of sneak current was achieved using the anti-parallel diode selector.
• The proposed method enables the realization of high-density RRAM crossbar arrays exceeding 1 Mb.
• The anti-parallel diode configuration functions effectively as a bipolar selector.

Conclusions:

• Anti-parallel connected diodes are a viable and effective bipolar selector for RRAM.
• This approach shows significant potential for advancing high-density bipolar RRAM crossbar array applications.
• The findings pave the way for more scalable and efficient memory technologies.