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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
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Spin-orbit interaction and isotropic electronic transport in graphene
Mahmoud M Asmar1, Sergio E Ulloa1
1Department of Physics and Astronomy and Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701-2979, USA and Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universität Berlin, 14195 Berlin, Germany.
Physical Review Letters
|April 22, 2014
Summary
Spin-orbit interactions (SOIs) in graphene significantly alter charge carrier scattering, making it more isotropic. This effect, observable in transport measurements, can quantify SOIs in graphene systems.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Broken symmetries in graphene impact the behavior of its charge carriers.
- Spin-orbit interactions (SOIs) are crucial for understanding electronic properties in materials.
Purpose of the Study:
- Analyze scattering by defects in graphene under the influence of SOIs.
- Investigate how SOIs affect the transport and elastic scattering times of charge carriers.
- Determine if SOIs can be quantified through transport measurements.
Main Methods:
- Theoretical analysis of scattering processes in graphene.
- Focus on the ratio of transport to elastic times for charge carriers.
- Consideration of spin-orbit interactions and varying carrier concentrations.
Main Results:
- A constant ratio (approximately 2) of transport to elastic times indicates anisotropic scattering for massless electrons in graphene.
- SOIs cause a significant decrease in this ratio, particularly at low carrier concentrations.
- Scattering becomes more isotropic as SOIs increase.
Conclusions:
- The observed decrease in the transport-to-elastic time ratio due to SOIs provides a method for evaluating these interactions.
- Transport measurements in graphene systems with enhanced spin-orbit coupling can quantify the strength of SOIs.
- This study offers a pathway for characterizing spin-orbit effects in graphene-based electronic devices.
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