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Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

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Published on: January 4, 2016

Silicon interfacial passivation layer chemistry for high-k/InP interfaces.

Hong Dong¹, Wilfredo Cabrera, Xiaoye Qin

¹Department of Materials Science and Engineering, University of Texas at Dallas , Richardson, Texas 75080, United States.

ACS Applied Materials & Interfaces

|April 23, 2014

Summary

Thin silicon passivation layers improve indium phosphide interfaces for advanced electronics. Silicon effectively scavenges oxides, but indium out-diffusion remains a challenge for thermal stability.

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Area of Science:

Materials Science
Surface Chemistry
Semiconductor Physics

Background:

Indium phosphide (InP) is a critical semiconductor material for high-frequency and optoelectronic applications.
Achieving stable interfaces is crucial for integrating InP with high-k dielectrics in advanced electronic devices.
Thin interfacial passivation layers (IPLs) are explored to mitigate Fermi level pinning and improve device performance.

Purpose of the Study:

To investigate the interfacial chemistry of thin silicon (Si) IPLs on InP substrates before atomic layer deposition (ALD).
To evaluate the effectiveness of Si IPLs in scavenging native oxides and phosphorus oxides.
To assess the thermal stability of high-k/Si/InP stacks and identify potential degradation mechanisms.

Main Methods:

Deposition of 1 nm Si IPLs on acid-etched and native oxide InP(100) surfaces.
Atomic layer deposition (ALD) of high-k dielectrics (aluminum oxide, aluminum silicate, hafnium silicate).
In situ annealing experiments under ultrahigh vacuum up to 500 °C.
Surface analysis techniques to investigate interfacial chemistry and material stability.

Main Results:

Silicon IPLs effectively scavenged phosphorus oxides from acid-etched InP surfaces, but not completely from native oxide surfaces.
Formation of aluminum silicate and hafnium silicate was observed after ALD and annealing.
The aluminum oxide/Si/InP stack exhibited the highest thermal stability among the investigated structures.
Indium out-diffusion through the Si IPL and high-k dielectric was observed, potentially leading to volatile species formation.

Conclusions:

Thin Si IPLs offer significant benefits for InP surface passivation, particularly on acid-etched substrates.
The choice of high-k dielectric and substrate preparation impacts the thermal stability of the InP/high-k interface.
Indium out-diffusion presents a key challenge for the long-term reliability of Si-passivated InP devices, necessitating further investigation and mitigation strategies.