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The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery
Yisong Lei1, Yuqing Yang1, Yebing Liu1
1Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China.
Abstract:
A tritium beta-voltaic battery using a crystalline silicon convertor composed of (100)Si/SiO2/Si3N4 film degrades remarkably with radiation from a high intensity titanium tritide film. Simulation and experiments were carried out to investigate the main factor causing the degradation. The radiation damages mainly comes from the x-ray emitted from the titanium tritide film and beta particle can relieve the damages. The x-ray radiation induced positive charges in the SiO2 film destroying the output property of the PN diode with the induction of an electric field.
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