A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions
Junjie Qi1, Xiaofeng Hu, Zengze Wang
1State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China. junjieqi@ustb.edu.cn yuezhang@ustb.edu.cn.
Abstract:
Recently, self-powered devices based on a p-n heterojunction have been widely reported, but there are few reports about self-powered UV detectors based on a single ZnO microwire/p-Si film with double heterojunctions. Compared with the common p-n heterojunction type devices, the fabricated devices with double heterojunctions based on a single n-type ZnO microwire and a p-type Si film exhibited excellent electrical performance such as an ideal rectification behaviour and a low turn-on voltage. At zero bias, the fabricated device can deliver a photocurrent of 71 nA, a high photosensitivity of about 3.17 × 10(3) under UV light (0.58 mW cm(-2)) illumination and a fast rising and falling time of both less than 0.3 s. Furthermore, the photocurrent increased with the rising of the optical intensity at low power intensities. The physical mechanism has been explained by energy band diagrams.
