Simulation method for resonant light scattering of exciton confined to arbitrary geometry

We develop an electromagnetic (EM) simulation method based on a finite-element method (FEM) for an exciton confined to a semiconductor nanostructure. The EM field inside the semiconductor excites two transverse exciton polariton and a single longitudinal exciton at a given frequency. Established EM simulation methods cannot be applied directly to semiconductor nanostructures because of this multimode excitation; however, the present method overcomes this difficulty by introducing an additional boundary condition. To avoid spurious solutions and enhance the precision, we propose a hybrid edge-nodal element formulation in which edge and nodal elements are employed to represent the transverse and longitudinal polarizations, respectively. We apply the developed method to the EM-field scattering and distributions of exciton polarizations of spherical and hexagonal-disk quantum dots.