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Updated: Apr 30, 2026

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
Published on: July 22, 2013
Highly stable carbon nanotube top-gate transistors with tunable threshold voltage
Huiliang Wang1, Brian Cobb, Albert van Breemen
1Department of Materials Science & Engineering, Department of Chemical Engineering, Stanford University, Stanford, CA, 94305.
Abstract:
Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors are observed when P(VDF-TrFE-CTFE) is utilized as a topgate dielectric. Furthermore, continuous tuning of the threshold voltages of both unipolar and ambipolar SWNT thin-film transistors (TFTs) is demonstrated for the first time.
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