Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Epidemiology and clinical outcomes of von Hippel-Lindau disease in Korea: a nationwide cohort study.

Scientific reports·2026
Same author

Translational Relevance of the MAM Model in Schizophrenia : A Systematic Review of Behavioral and Neurobiological Findings.

Biological psychiatry·2026
Same author

Healing effect of high-energy proton irradiation on the reliability of HfZrO based high-k dielectrics.

Nano convergence·2026
Same author

From PCOS to PMOS: perspectives on the new nomenclature.

Lancet (London, England)·2026
Same author

Risk stratification for repeat prostate biopsy: PI-RADS 3 lesions and the differential role of PSA density.

Prostate international·2026
Same author

Survival Outcomes of Open Versus Robot-Assisted Radical Cystectomy: A Large-Scale Multicenter Propensity Score Matched Study.

Journal of clinical medicine·2026

Related Experiment Video

Updated: Apr 30, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

14.7K

Quantitatively estimating defects in graphene devices using discharge current analysis method.

Ukjin Jung1, Young Gon Lee1, Chang Goo Kang1

  • 1Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea 500-712.

Scientific Reports
|May 10, 2014
PubMed
Summary

A new discharge current analysis method accurately measures graphene quality in field-effect transistors (FETs). This technique quantifies charging sites, crucial for improving graphene-based device stability and performance.

More Related Videos

Development of a 3D Graphene Electrode Dielectrophoretic Device
11:15

Development of a 3D Graphene Electrode Dielectrophoretic Device

Published on: June 22, 2014

11.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K

Related Experiment Videos

Last Updated: Apr 30, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

14.7K
Development of a 3D Graphene Electrode Dielectrophoretic Device
11:15

Development of a 3D Graphene Electrode Dielectrophoretic Device

Published on: June 22, 2014

11.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene's application is hindered by defects, which significantly impact device performance.
  • Assessing graphene quality within integrated devices relies on indirect metrics like mobility and drive current.

Purpose of the Study:

  • To develop a direct discharge current analysis method for evaluating integrated graphene quality in field-effect transistors (FETs).
  • To validate this method across diverse device structures and correlate findings with established characterization techniques.

Main Methods:

  • Analysis of discharge current in graphene field-effect transistor (FET) structures.
  • Fabrication of graphene FETs on different substrates (SiO2/Si and poly(ethylene naphthalate) - PEN).
  • Correlation of discharge current analysis results with Raman spectroscopy (D to G band intensity ratio).

Main Results:

  • The discharge current analysis method quantifies charging site density in the order of 10^14/cm^2.
  • Results closely correlate with the D to G band intensity ratio from Raman spectroscopy, validating the method.
  • Graphene FETs on PEN substrates exhibit lower charging site density compared to those on SiO2/Si, attributed to reduced interfacial interactions.

Conclusions:

  • The discharge current analysis provides an accurate and quantitative measure of graphene quality post-fabrication.
  • This method is essential for enhancing the stability and reliability of graphene-based electronic devices.
  • Understanding interfacial effects is key to optimizing graphene quality on different substrates.