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Updated: Apr 30, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Carbon isotope labelling in graphene research
1J. Heyrovsky Institute of Physical Chemistry of the AS CR, v.v.i., Dolejskova 2155/3, CZ-18223 Prague 8, Czech Republic. otakar.frank@jh-inst.cas.cz.
Abstract:
The large scale production of graphene for any potential application relies on catalytic chemical vapour deposition (CVD). Despite much effort put into the graphene CVD research, there are still many challenges to be solved, not only concerning the growth itself, but also the subsequent treatment, i.e. transfer from the catalyst to a desired substrate. The need for fast progress naturally necessitates easy-to-use, versatile and efficient characterization methods. This perspective reviews the recent advances and potential of probably the most prospective one--Raman spectroscopy in connection with carbon isotope labelling of the CVD grown graphene layers. We discuss its use for the explanation and optimization of the growth process, followed by examples of employing isotope engineering in the studies of fundamental properties of graphene, not only by Raman spectroscopy.
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