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Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

Jessica D Douglas1, Mark S Chen, Jeremy R Niskala

  • 1Departments of Chemistry and Chemical and Biomolecular Engineering, University of California, Berkeley, Berkeley, CA, 94720-1460, USA; Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.

Advanced Materials (Deerfield Beach, Fla.)
|May 14, 2014
PubMed
Summary

No abstract available in PubMed .

Keywords:
hole transfern-type materialsnon-fullerene materialsorganic photovoltaicssmall-molecule devices

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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