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Updated: Apr 29, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Boron (B) or phosphorus (P) doping minimally affects silicon nanocrystal (SiNc) energy gaps, introducing levels in the forbidden band. Surface modification with ethyl or isopropyl groups lowers SiNc total energy, but excessive grafting causes computational issues.
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