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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

An accurate single-electron pump based on a highly tunable silicon quantum dot.

Alessandro Rossi¹, Tuomo Tanttu, Kuan Yen Tan

¹School of Electrical Engineering & Telecommunications, The University of New South Wales , Sydney 2052, Australia.

|May 15, 2014

Summary

We developed a silicon quantum dot single-electron pump for precise electrical current generation. This device achieves high accuracy, below 50 parts per million, paving the way for a new electrical current standard.

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Area of Science:

Quantum electronics
Solid-state physics
Metrology

Background:

Accurate electrical current generation is crucial for metrology.
Single-electron pumps offer a route to a current standard based on the elementary charge.
Existing pumps face challenges in accuracy and robustness.

Purpose of the Study:

To develop a highly accurate nanoscale single-electron pump.
To enhance charge transfer accuracy using electrostatic confinement.
To improve operational robustness and reduce errors in quantized current generation.

Main Methods:

Utilized a silicon-based quantum dot with tunable tunnel barriers.
Employed engineered gate electrodes for precise electrostatic confinement control.
Optimized gate voltage adjustments to suppress non-adiabatic transitions.

Main Results:

Achieved a quantized current output exceeding 80 pA.
Demonstrated experimentally determined relative uncertainty below 50 parts per million.
Enhanced charge transfer accuracy through controlled electrostatic confinement.

Conclusions:

The silicon quantum dot single-electron pump is a viable tool for accurate current generation.
Precise control of electrostatic confinement significantly improves pump accuracy.
This technology holds potential for realizing a new fundamental standard of electrical current.