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Updated: Apr 29, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Analysis of dopant atom distribution and quantification of oxygen vacancies on individual Gd-doped CeO2 nanocrystals
Daniel G Stroppa1, Cleocir J Dalmaschio, Lothar Houben
1Ernst Ruska-Centre, Forschungszentrum Jülich, 52425 Jülich (Germany); Brazilian Nanotechnology National Laboratory, 13083-970, Campinas, SP (Brazil); Current position: International Iberian Nanotechnology Laboratory (INL), Braga (Portugal). daniel.stroppa@inl.int.
Abstract:
This work reports the analysis of the distribution of Gd atoms and the quantification of O vacancies applied to individual CeO2 and Gd-doped CeO2 nanocrystals by electron energy-loss spectroscopy. The concentration of O vacancies measured on the undoped system (6.3±2.6 %) matches the expected value given the typical Ce(3+) content previously reported for CeO2 nanoparticles. The doped nanoparticles have an uneven distribution of dopant atoms and an atypical amount of O vacant sites (37.7±4.1 %). The measured decrease of the O content induced by Gd doping cannot be explained solely by the charge balance including Ce(3+) and Gd(3+) ions.
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