Related Experiment Video
Updated: Apr 29, 2026
05:57
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
9.4K
Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors.
M Tchernycheva1, A Messanvi, A de Luna Bugallo
1Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11 , 91405 Orsay, France.
Nano Letters
|May 20, 2014
Summary
We developed a novel photonic platform using nanowire light-emitting diodes (LED) and photodetectors. These components are optically linked by waveguides, enabling efficient optical communication at 400 nm.
Area of Science:
- Optoelectronics
- Nanotechnology
- Photonics
Background:
- Integrated photonic devices require efficient light sources and detectors.
- Nanowire-based optoelectronics offer potential for miniaturization and novel functionalities.
- Metal-organic vapor-phase epitaxy (MOVPE) is a key technique for fabricating semiconductor nanostructures.
Purpose of the Study:
- To fabricate and characterize an integrated photonic platform.
- To demonstrate optical coupling between light-emitting diodes (LEDs) and photodetectors.
- To achieve spectral matching for efficient optical communication.
Main Methods:
- Fabrication of InGaN/GaN core-shell nanowires using MOVPE.
- Device fabrication via electron beam lithography on Si/SiO2 templates.
- Integration of LEDs with narrow quantum wells and photodetectors with wide segments for spectral matching.
- Optical coupling using silicon nitride (SiN) waveguides.
Main Results:
- Successful fabrication of a photonic platform with integrated nanowire LEDs and photodetectors.
- Optical communication demonstrated at a wavelength of approximately 400 nm.
- Fast photodetector response with signal variation correlated to LED switching (transition time < 0.5 s).
Conclusions:
- The developed platform enables efficient optical communication using integrated nanowire optoelectronic devices.
- The use of tailored active regions ensures good spectral overlap between emission and detection.
- The fast response time indicates potential for high-speed optical interconnects.
