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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Flexoelectric control of defect formation in ferroelectric epitaxial thin films

Daesu Lee1, Byung Chul Jeon, Aram Yoon

  • 1Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 151-747, Korea; Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Korea.

Advanced Materials (Deerfield Beach, Fla.)
|May 23, 2014
PubMed

Keywords:
defect engineeringepitaxial thin filmferroelectricflexoelectricstrain gradient

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