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Open-circuit voltage improvement in tantalum-doped TiO2 nanocrystals
Feng Gu1, Wenjuan Huang, Shufen Wang
1Key Laboratory for Ultrafine Materials of Ministry of Education, East China University of Science and Technology, Shanghai 200237, China. gufeng@ecust.edu.cn huyanjie@ecust.edu.cn.
Physical Chemistry Chemical Physics : PCCP
|May 30, 2014
Abstract:
Enhanced electron concentration derived from Ta(5+) doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices could be achieved.
