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    High-power, erbium-doped distributed feedback lasers were fabricated using CMOS-compatible methods. These on-chip lasers achieve 75 mW output power, demonstrating stability and potential for higher performance.

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    Area of Science:

    • Photonics and Optoelectronics
    • Materials Science
    • Integrated Optics

    Background:

    • Developing high-power, on-chip lasers is crucial for integrated photonic circuits.
    • Erbium-doped materials offer efficient light amplification at telecommunication wavelengths.
    • CMOS-compatible fabrication is essential for scalable photonic integration.

    Purpose of the Study:

    • To demonstrate on-chip, high-power, erbium-doped distributed feedback (DFB) lasers.
    • To achieve single-mode continuous wave (CW) operation with high output power.
    • To evaluate the stability and performance of these lasers under various pumping conditions.

    Main Methods:

    • Fabrication using a CMOS-compatible flow with silicon nitride waveguides and gratings.
    • Deposition of an erbium-doped aluminum oxide layer as the final fabrication step.
    • Characterization of laser performance, including output power, mode operation, and amplitude noise.

    Main Results:

    • Successful demonstration of on-chip, high-power, erbium-doped DFB lasers.
    • Achieved single-mode CW operation with a maximum output power of 75 mW.
    • Observed stable operation without thermal damage and no saturation of output power at high pump intensities.
    • Demonstrated stability and absence of self-pulsing when the pump power is sufficiently above threshold.

    Conclusions:

    • CMOS-compatible fabrication enables the creation of high-performance, on-chip erbium-doped DFB lasers.
    • The demonstrated lasers offer significant output power and potential for further power scaling.
    • These devices are stable and suitable for various integrated photonic applications requiring high optical power.