Diffusion induced effects on geometry of Ge nanowires
S J Rezvani1, N Pinto, L Boarino
1School of Science and Technology, University of Camerino, I-62032 Camerino, Italy. seyedjavad.rezvani@unicam.it.
Nanoscale
|June 3, 2014
Summary
We explored how germanium (Ge) evaporation flux impacts germanium nanowire growth. Higher flux can cause direct Ge impinging and alter adatom diffusion, affecting nanowire geometry and properties.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Germanium nanowires (GeNWs) are crucial for nanoelectronic devices.
- Understanding growth mechanisms is key to controlling GeNW properties.
Purpose of the Study:
- Investigate the influence of germanium (Ge) evaporation flux on GeNW growth.
- Analyze the impact of flux on growth rate, adatom diffusion, and resulting wire geometry.
Main Methods:
- Controlled Ge evaporation experiments.
- Analysis of nanowire growth rates (dL/dt).
- Microscopic examination for geometric anomalies.
Main Results:
- Observed GeNW growth rates align with existing models.
- Detected anomalies in larger diameter wires, suggesting direct Ge impinging.
- Demonstrated that deposition flux alters Ge adatom diffusion length.
- Observed flux-induced lateral growth at the base of GeNWs.
Conclusions:
- Deposition flux significantly influences GeNW growth dynamics and morphology.
- Direct Ge impinging may dominate growth for larger diameter wires.
- Controlling Ge flux is essential for tailoring GeNW physical properties.
