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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Building a nano-crystalline α-alumina layer at a liquid metal/sapphire interface by ultrasound
Wei Cui1, Jiuchun Yan1, Yan Dai1
1State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, People's Republic of China.
Abstract:
Transitional layers at the metal/ceramic interface play an very important role in ceramic joining. In this study, sapphire blocks were ultrasonically dipped in liquid Sn-Zn-Al alloy. It is found that the ultrasound promoted rapid oxidation reaction of aluminum at the Sn-Zn-Al/sapphire interface at 230°C in the ambient atmosphere, resulting in the formation of a nano-crystalline α-Al2O3 layer (NCAL). In a ∼2nm boundary layer of the NCAL, the lattice matches the sapphire substrate well. Thus, a smooth transition of the lattice from sapphire to metal was formed through the NCAL. Ultrasonically soldered sapphire joints were made with Sn-Zn-Al as the filler alloy. Compressive shear strength of the joints reached 43-48MPa, which is relatively high comparing to other Al2O3 joints made of Sn alloys doped with Ti or Rear Earth elements. Thus, a new mechanism of ultrasonic soldering, i.e. building an oxide transitional layer on the surface of the solid, was revealed. We expect this sonochemical process to be applicable to other metal/oxide systems.

