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Filament theory based WORM memory devices using aluminum/poly(9-vinylcarbazole)/aluminum structures
Aswin Suresh1, Govind Krishnakumar, Manoj A G Namboothiry
1School of Physics, Indian Institute of Science Education and Research, Thiruvananthapuram, CET Campus, Thiruvananthapuram-695016, Kerala, India. manoj@iisertvm.ac.in.
Physical Chemistry Chemical Physics : PCCP
|June 4, 2014
Summary
This study demonstrates a novel Write Once Read Many (WORM) memory device using poly(N-vinylcarbazole) (PVK). The device exhibits a high ON/OFF ratio and stable performance, suggesting potential for advanced data storage applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Electrical Engineering
Background:
- Organic electronics offer promising avenues for novel memory devices.
- Poly(N-vinylcarbazole) (PVK) is a well-studied organic semiconductor with potential for electronic applications.
Purpose of the Study:
- To investigate the memory characteristics of spin-coated PVK sandwiched between aluminum electrodes.
- To explore the switching mechanism and performance metrics of these organic WORM devices.
Main Methods:
- Fabrication of thin-film devices with PVK active layer and aluminum electrodes on a glass substrate.
- Electrical characterization including current-voltage (I-V) measurements to determine device behavior.
- Analysis of switching characteristics, ON/OFF ratio, retention, and endurance.
Main Results:
- The fabricated devices exhibited unipolar Write Once Read Many (WORM) characteristics.
- Devices switched from a low-resistance ON state (ohmic behavior) to a high-resistance OFF state (space charge limited current) near -2 V.
- Achieved a high ON/OFF ratio of 10^8, retention of 1000 s, and endurance of approximately 10^6 cycles.
Conclusions:
- The observed WORM behavior is attributed to the rupturing of metallic filaments within the device, likely due to Joule heating.
- The PVK-based WORM devices demonstrate excellent performance metrics, indicating their viability for non-volatile memory applications.
