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Conductance and Fano factor in normal/ferromagnetic/normal bilayer graphene junction
Z Rashidian1, F M Mojarabian2, P Bayati3
1Department of Physics, Faculty of Science, Lorestan University, Lorestan, Iran.
Summary
We theoretically explored transport in bilayer graphene junctions. Tuning voltage and exchange fields control band structure, switching transport from pseudodiffusive to tunneling or ballistic, and enabling spin polarization control.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Bilayer graphene junctions offer tunable electronic properties.
- Ferromagnetic strips can modify graphene's band structure and transport characteristics.
Purpose of the Study:
- To theoretically investigate the transport properties of bilayer graphene junctions with attached ferromagnetic strips.
- To explore the control of band gap, band structure, and spin polarization via external stimuli.
Main Methods:
- Utilizing the Landauer–Büttiker formula to calculate conductance and Fano factor.
- Theoretical modeling of electron transport in engineered graphene systems.
Main Results:
- Bias voltage and exchange fields can tune the band gap and band structure.
- Transport transitions from pseudodiffusive (Fano factor = 1/3) to tunneling (Fano factor = 1) or ballistic (Fano factor = 0).
- Potential difference controls the spin polarization of the current.
Conclusions:
- Bilayer graphene junctions with ferromagnetic strips provide a versatile platform for controlling quantum transport.
- Tunable electronic and spin properties open possibilities for novel spintronic devices.
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