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Updated: Apr 28, 2026

Low-energy Cathodoluminescence for OxyNitride Phosphors
Published on: November 15, 2016
Optical excitation and external photoluminescence quantum efficiency of Eu³⁺ in GaN
W D A M de Boer1, C McGonigle1, T Gregorkiewicz1
1Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands.
Abstract:
We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y₂O₃, we find that the fraction of Eu(3+) ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (~10%) and (~3%) under continuous wave and pulsed excitation, respectively.
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