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Intense photocurrent from Mo-doped TiO2 film with depletion layer array
Sheng-Yun Luo1, Bing-Xi Yan, Jie Shen
1Department of Materials Science, Fudan University , Shanghai 200433, P. R. China.
ACS Applied Materials & Interfaces
|June 11, 2014
Summary
A novel bilayer titanium dioxide (TiO2) film structure enhances photocurrent under visible light. This structure, featuring etched trenches, significantly boosts carrier collection and photocurrent density.
Area of Science:
- Materials Science
- Photovoltaics
- Semiconductor Physics
Background:
- Titanium dioxide (TiO2) is a widely studied semiconductor for photocatalytic and photovoltaic applications.
- Enhancing photocurrent generation under visible light is crucial for efficient solar energy conversion.
- Developing novel nanostructures can improve charge carrier dynamics in TiO2 films.
Purpose of the Study:
- To investigate a novel bilayer TiO2 film structure for enhanced visible-light photocurrent.
- To explore the impact of a deposition-etching-redeposition process on TiO2 film properties.
- To correlate microstructural modifications with photocurrent performance.
Main Methods:
- Fabrication of a bilayer TiO2 film with a Mo-doped etched base layer and an undoped surface layer.
- Characterization using scanning electron microscopy, atomic force microscopy, X-ray diffraction, and UV-Vis spectroscopy.
- Measurement of photocurrent density under visible light using an electrochemical workstation.
Main Results:
- The novel structure successfully created an array of depletion layers within the TiO2 film.
- High parallel diffusivity near the depletion layer significantly enhanced carrier collection probability.
- Photocurrent density increased with etching depth, achieving a 56-fold enhancement at 660 nm etching depth compared to a standard TiO2 film.
- Visible light response was significantly improved.
Conclusions:
- The developed bilayer TiO2 structure with embedded depletion layers is highly effective for boosting visible-light photocurrent.
- The etching process and resulting trench structures are key to improved carrier collection and photocurrent.
- The concept of depletion layers at trench edges holds significant potential for optimizing wide-bandgap semiconductor films.

