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Apertureless beam pen lithography based on fully metal-coated polyurethane-acrylate (PUA) pyramidal microstructure
Optics Express
|June 13, 2014
Summary
This study introduces apertureless beam pen lithography using metal-coated pyramids to create nanoscale patterns. This technique enables significant ultraviolet energy concentration for high-resolution photolithography.
Area of Science:
- Nanofabrication
- Photolithography
- Materials Science
Background:
- Traditional photolithography faces limitations in achieving ultra-high resolution.
- Apertureless near-field techniques offer potential for overcoming diffraction limits.
Purpose of the Study:
- To demonstrate a novel apertureless beam pen lithography method using arrayed microstructures.
- To investigate the mechanism of enhanced ultraviolet energy transmission through metal-coated pyramids.
- To achieve high-resolution patterning for nanofabrication.
Main Methods:
- Fabrication of chromium-coated polyurethane acrylate (PUA) pyramidal microstructures.
- Illumination of the microstructure array with ultraviolet (UV) light.
- Finite-element simulation to analyze energy distribution.
- Photoresist patterning and lift-off process.
Main Results:
- Significant UV energy transmission through the apex of fully metal-coated PUA pyramids.
- Achieved patterned photoresist profiles of 117 nm depth and 180 nm FWHM at 54 mJ/cm(2) and 365 nm wavelength.
- Demonstrated lift-off process yielding arrayed metal dots with 300 nm diameter.
- Energy concentration near the pyramid apex increased by an order of magnitude.
Conclusions:
- Apertureless beam pen lithography is a viable technique for high-resolution patterning.
- The method relies on exposure dosage rather than physical imprinting.
- Potential for further improvements in resolution and efficiency exists.
