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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
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A high-responsivity photodetector absent metal-germanium direct contact
Optics Express
|June 13, 2014
Abstract:
We report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the simplified fabrication process, the device shows a responsivity of 1.14 A/W at -4 V reverse bias and 1.44 A/W at -12V, at 1550 nm wavelength. Dark current is less than 1µA under both bias conditions. We also demonstrate open eye diagrams at 40Gb/s.
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